ماژول لیزر دیودی نقطهای 784 نانومتر 120 میلیوات ساخت همدوس
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Technical Information Laser Diode 784 nm 120 mW |
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|---|---|---|---|
| Parameter | Min | Typ. | Max |
| Central Wavelength | 780 nm | 784 nm | 787 nm |
| Operating Temperature | −10 °C | - | 65 °C |
| Storage Temperature | −40 °C | - | 85 °C |
| Beam Divergence Angle - (Parallel) | 7.8 ° | 8.7 ° | 9.8 ° |
| Beam Divergence Angle - (Perpendicular) | 14.5 ° | 16 ° | 17.5 ° |
| Differential Efficiency | 0.8 mW/mA | 1 mW/mA | 1.3 mW/mA |
| Maximum (LD) Reverse Voltage | - | - | 2 V |
| Operating Current | - | 141 mA | 167 mA |
| Operating Voltage | - | 2.1 V | 2.5 V |
| Package | TO-18 (5.6mm) | ||
| Peak Output Power | - | - | 120 mW |
| Soldering Temperature | - | - | 300 °C |
| Threshold Current | - | 30 mA | 40 mA |